If you increase the channel length, you have a slower device but with better leakage. A thin gate oxide will be fast with high leakage, and a thick oxide will be slower with better leakage. -Heinz Schuetzeneder

 

If you increase the channel length, you have a slower device but with better leakage. A thin gate oxide will be fast with high leakage, and a thick oxide will be slower with better leakage.


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